Temperature Dependence of Dynamic Performance Characterization of 1.2-kV SiC Power MOSFETS Compared With Si IGBTs for Wide Temperature Applications

被引：58

作者：

Qi, Jinwei ^{[1
,2
]}

Yang, Xu ^{[2
,3
]}

Li, Xin ^{[1
,4
]}

Tian, Kai ^{[1
]}

Mao, Zhangsong ^{[1
]}

Yang, Song ^{[1
]}

Song, Wenjie ^{[1
]}

机构：

[1] Xi An Jiao Tong Univ, Sch Elect & Informat Engn, Dept Microelect, Xian 710049, Shaanxi, Peoples R China

[2] Xi An Jiao Tong Univ, State Key Lab Elect Insulat & Power Equipment, Xian 710049, Shaanxi, Peoples R China

[3] Xi An Jiao Tong Univ, Sch Elect Engn, Xian 710049, Shaanxi, Peoples R China

[4] Guangdong Shunde Xian Jiaotong Univ Acad, Foshan 528300, Peoples R China

来源：

IEEE TRANSACTIONS ON POWER ELECTRONICS | 2019年 / 34卷 / 09期

基金：

中国国家自然科学基金;

关键词：

1.2-kV SiC MOSFET; cryogenic temperature; dc-dc converter efficiency; dynamic resistance; switching characterization;

D O I：

10.1109/TPEL.2018.2884966

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Due to the superior material properties, SiC MOSFET is a promising candidate switching device for high power density and high efficiency power conversion system. The robustness of switching device under extreme temperature condition becomes a crucial factor to ensure power conversion system safely and continuously operating. In this paper, the temperature dependence of dynamic performance of 1.2-kV 4H-SiC power MOSFETs is systematically characterized over such wide temperature range of 90-493 K and compared with 1.2-kV Si IGBT by a layout optimized double pulse tester (DPT). The degradation of dynamic ON-resistance related interface traps is analyzed specially and the energy loss caused by degradation is quantified at cryogenic temperatures. Besides, to validate the performance of SiC MOSFET under safely and continuously operating conditions for cryogenic temperature application, a hard switched non-isolated dcdc buck converter is designed and tested to estimate temperature dependence of conversion efficiency under temperature range of 90-290 K. Moreover, the further characterizations are conducted with gate resistance range of 2-20O, load current range of 3-30 A, and converter output current of 5-22.5 A under different switching frequency (up to 150 kHz) to validate high power and high frequency application potential of SiC MOSFET.

引用

页码：9105 / 9117

页数：13

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