Quality factors in micron- and submicron-thick cantilevers

被引:559
作者
Yasumura, KY [1 ]
Stowe, TD
Chow, EM
Pfafman, T
Kenny, TW
Stipe, BC
Rugar, D
机构
[1] Stanford Univ, Dept Appl Phys, Stanford, CA 94305 USA
[2] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA
[3] Stanford Univ, Dept Mech Engn, Stanford, CA 94305 USA
[4] IBM Corp, Div Res, Almaden Res Ctr, San Jose, CA 95120 USA
基金
美国国家科学基金会;
关键词
cantilever; force sensor; mechanical dissipation; micromechanical resonator; quality factor; surface losses;
D O I
10.1109/84.825786
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Micromechanical cantilevers are commonly used for detection of small forces in microelectromechanical sensors (e.g., accelerometers) and in scientific instruments (e.g., atomic force microscopes), A fundamental limit to the detection of small forces is imposed by thermomechanical noise, the mechanical analog of Johnson noise, which is governed by dissipation of mechanical energy, This paper reports on measurements of the mechanical quality factor Q for arrays of silicon-nitride, polysilicon, and single-crystal silicon cantilevers. By studying the dependence of Q on cantilever material, geometry, and surface treatments, significant insight into dissipation mechanisms has been obtained. For submicron-thick cantilevers, Q is found to decrease with decreasing cantilever thickness, indicating surface Loss mechanisms. For single-crystal silicon cantilevers, significant increase in room temperature Q is obtained after 700 degrees C heat treatment in either N-2 or forming gas. At low temperatures, silicon cantilevers exhibit a minimum in Q at approximately 135K, possibly due to a surface-related relaxation process. Thermoelastic dissipation is not a factor for submicron-thick cantilevers, but is shown to be significant for silicon-nitride cantilevers as thin as 2.3 mu m. [434].
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页码:117 / 125
页数:9
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