SPIN DYNAMICS IN III-V/II-VI: Mn HETEROVALENT QUANTUM WELLS

被引:0
作者
Toropov, A. A. [1 ]
Terent'ev, Ya. V. [1 ]
Lebedev, A. V. [1 ]
Kop'ev, P. S. [1 ]
Ivanov, S. V. [1 ]
Koyama, T. [2 ]
Nishibayashi, K. [2 ]
Murayama, A. [2 ]
Oka, Y. [2 ]
机构
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
[2] Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Sendai, Miyagi 9808577, Japan
来源
INTERNATIONAL JOURNAL OF MODERN PHYSICS B | 2009年 / 23卷 / 12-13期
关键词
Spin relaxation; diluted magnetic semiconductors; localized excitons; RELAXATION; INJECTION;
D O I
10.1142/S0217979209062293
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on the spectroscopic magnetooptical studies of spin dynamics in diluted magnetic semiconductor (DMS) GaAs/AlGaAs/ZnSe/ZnCdMnSe heterovalent double quantum wells (QW). The transients of circularly polarized photoluminescence in an external magnetic field are detected in the structures with different widths of the GaAs QW. The analysis of the data, performed within the rate-equation model, has allowed separate estimations of the spin relaxation rate of localized electrons and holes. The spin flip of the electrons confined in the DMS ZnCdMnSe QW is faster than 20 ps, whereas the spin flip of the heavy hole localized in the GaAs QW is as long as similar to 9 ns. The long spin flip of the holes is presumably governed by their strong 3-dimensional localization.
引用
收藏
页码:2739 / 2749
页数:11
相关论文
共 29 条
  • [1] SPIN-FLIP RELAXATION-TIME OF CONDUCTION ELECTRONS IN CD1-XMNXTE QUANTUM-WELLS
    BASTARD, G
    CHANG, LL
    [J]. PHYSICAL REVIEW B, 1990, 41 (11): : 7899 - 7902
  • [2] BRICHKIN AS, 2007, SOV PHYS JETP, V132, P426
  • [3] Effect of sp-d exchange interaction on excitonic states in CdSe/ZnSe/Zn1-xMnxSe quantum dots
    Chekhovich, E. A.
    Brichkin, A. S.
    Chernenko, A. V.
    Kulakovskii, V. D.
    Sedova, I. V.
    Sorokin, S. V.
    Ivanov, S. V.
    [J]. PHYSICAL REVIEW B, 2007, 76 (16)
  • [4] Exciton spin relaxation in diluted magnetic semiconductor Zn1-xMnxSe/CdSe superlattices:: Effect of spin splitting and role of longitudinal optical phonons -: art. no. 125313
    Chen, WM
    Buyanova, IA
    Rudko, GY
    Mal'shukov, AG
    Chao, KA
    Toropov, AA
    Terent'ev, Y
    Sorokin, SV
    Lebedev, AV
    Ivanov, SV
    Kop'ev, PS
    [J]. PHYSICAL REVIEW B, 2003, 67 (12):
  • [5] Optical spin resonance and transverse spin relaxation in magnetic semiconductor quantum wells
    Crooker, SA
    Awschalom, DD
    Baumberg, JJ
    Flack, F
    Samarth, N
    [J]. PHYSICAL REVIEW B, 1997, 56 (12): : 7574 - 7588
  • [6] Manipulation of the spin memory of electrons in n-GaAs -: art. no. 256801
    Dzhioev, RI
    Korenev, VL
    Merkulov, IA
    Zakharchenya, BP
    Gammon, D
    Efros, AL
    Katzer, DS
    [J]. PHYSICAL REVIEW LETTERS, 2002, 88 (25) : 4 - 256801
  • [7] Spin-dependent resonant tunneling through 6 μm diameter double barrier resonant tunneling diode
    Fang, Z. L.
    Wu, P.
    Kundtz, N.
    Chang, A. M.
    Liu, X. Y.
    Furdyna, J. K.
    [J]. APPLIED PHYSICS LETTERS, 2007, 91 (02)
  • [8] Injection and detection of a spin-polarized current in a light-emitting diode
    Fiederling, R
    Keim, M
    Reuscher, G
    Ossau, W
    Schmidt, G
    Waag, A
    Molenkamp, LW
    [J]. NATURE, 1999, 402 (6763) : 787 - 790
  • [9] Single-hole spin relaxation in a quantum dot
    Flissikowski, T
    Akimov, IA
    Hundt, A
    Henneberger, F
    [J]. PHYSICAL REVIEW B, 2003, 68 (16):
  • [10] Electron-spin dephasing in GaAs/Al0.34Ga0.66As quantum wells with a gate-controlled electron density
    Gerlovin, I. Ya.
    Efimov, Yu. P.
    Dolgikh, Yu. K.
    Eliseev, S. A.
    Ovsyankin, V. V.
    Petrov, V. V.
    Cherbunin, R. V.
    Ignatiev, I. V.
    Yugova, I. A.
    Fokina, L. V.
    Greilich, A.
    Yakovlev, D. R.
    Bayer, M.
    [J]. PHYSICAL REVIEW B, 2007, 75 (11):