Effects of substrate temperature on the dielectric properties of Bi1.5MgNb1.5O7 thin films derived from pulsed laser deposition

被引：13

作者：

Yu, Shihui ^{[1
]}

Li, Lingxia ^{[1
]}

Zhang, Weifeng ^{[2
,3
]}

Xu, Dan ^{[1
]}

Dong, Helei ^{[1
]}

Jin, Yuxin ^{[1
]}

机构：

[1] Tianjin Univ, Sch Elect & Informat Engn, Tianjin 300072, Peoples R China

[2] Henan Univ, Key Lab Photovolta Mat Henan Prov, Kaifeng 475004, Peoples R China

[3] Henan Univ, Sch Phys & Elect, Kaifeng 475004, Peoples R China

来源：

MATERIALS CHEMISTRY AND PHYSICS | 2014年 / 148卷 / 1-2期

基金：

中国博士后科学基金;

关键词：

Thin films; Dielectric properties; Microstructure; Ceramics; LEAKAGE;

D O I：

10.1016/j.matchemphys.2014.08.009

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The dependence of dielectric properties on the substrate temperature of the Bi1.5MgNb1.5O7 (BMN) thin films prepared on Au-coated Si substrates by the pulsed laser deposition technique has been investigated. It is shown that the substrate temperature has a significant effect on the structural and dielectric properties of BMN thin films. The deposited BMN thin films had a cubic pyrochlore phase when deposited at 600 degrees C or higher. A BMN thin film with an optimal substrate temperature of 700 degrees C has a medium dielectric constant of 106, a high tunability of 22.1% and a low loss tangent of 0.003. In addition, the effect of the substrate temperature on the leakage current of the thin films was also discussed. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：426 / 430

页数：5

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