Variability-Tolerant Current-Mode Link Design for NoC

被引:0
作者
Gawish, Eman Kamel [1 ]
El-Kharashi, M. Watheq [2 ]
AbuElYazeed, M. F. [3 ]
机构
[1] Cairo Univ, Elect & Elect Commun Engn Dept, Cairo, Egypt
[2] Ain Shams Univ, Dept Syst & Comp Engn, Cairo 11517, Egypt
[3] Ain Shams Univ, Dept Elect & Elect Commun Engn, Cairo 11517, Egypt
来源
2013 IEEE PACIFIC RIM CONFERENCE ON COMMUNICATIONS, COMPUTERS AND SIGNAL PROCESSING (PACRIM) | 2013年
关键词
Floor-plan; Networks-on-Chip; Current-mode interconnect; process variability;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper proposes a statistical link design methodology for variability-tolerant current-mode interconnect applied for Networks-on-Chip links. The model takes into considerations the systematic and random effects of process variability. The model calculates the resistive, capacitive and device variations then uses it to calculate current variations of each NoC link in a floor-plan. Statistical link design proposes a current safe guard to keep signal integrity versus existing process variability sources. The proposed technique is tested using test cases of 4x4 meshes at 65 nm, 45 nm, 32 nm, 22nm, and 16 nm technologies. Results show that the received current variations at 16nm approach 30% of the total current at the link receiver. The current variations are increased by 100% as NoC mesh size scales from 4x4 to 16x16 at 45 nm. Comparing our statistical design to worst-case at 65 nm, we save up to 33 % of the total power cost compared to worst-case. The link failure probability is modeled to calculate the average NoC link failure rate. NoC with links designed to have statistical guard achieves low failure rate that is up to 3.7 % for 4x4 mesh.
引用
收藏
页码:131 / 136
页数:6
相关论文
共 9 条
  • [1] [Anonymous], 2007, R LANG ENV STAT COMP
  • [2] Gilbert P., 2012, R NEWS, V12
  • [3] Mehrotra V., 2001, MODELING EFFECTS SYS
  • [4] Nicopoulos C., 2009, NETWORK CHIP ARCHITE, P5
  • [5] Nigussie E.E., 2012, ANALOG CIRC SIG PROC, DOI DOI 10.1007/978-1-4614-0131-5
  • [6] Orshansky M, 2008, INTEGR CIRCUIT SYST, P1
  • [7] Ribeiro Jr P. J., 2001, R NEWS, V1
  • [8] VARIUS: A model of process variation and resulting tuning errors for icroarchitects
    Sarangi, Smruti R.
    Greskamp, Brian
    Teodorescu, Radu
    Nakano, Jun
    Tiwari, Abhishek
    Torrellas, Josep
    [J]. IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 2008, 21 (01) : 3 - 13
  • [9] 2008, INTEL TECHNOLOGY J, V12