Boron nitride films synthesized by RF plasma CVD of borane-ammonia and nitrogen

被引：17

作者：

Deb, B ^{[1
]}

Bhattacharjee, B ^{[1
]}

Ganguli, A ^{[1
]}

Chaudhuri, S ^{[1
]}

Pal, AK ^{[1
]}

机构：

[1] Indian Assoc Cultivat Sci, Dept Mat Sci, Kolkata 700032, W Bengal, India

来源：

MATERIALS CHEMISTRY AND PHYSICS | 2002年 / 76卷 / 02期

关键词：

boron nitride; RF plasma CVD; FTIR;

D O I：

10.1016/S0254-0584(01)00524-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Boron nitride films were deposited at different substrate temperatures (623-773 K) on Si and quartz (fused silica) substrates by RF plasma chemical vapour deposition technique using borane-ammonia and nitrogen as the precursor gases. FTIR studies indicated the films to contain mixed phases of c-BN and h-BN and the percentage of c-BN (35-53%) was dependent on the deposition environment. The optimum deposition condition for obtaining higher c-BN phase was ascertained. The surface textures of the films were observed by scanning electron microscope and atomic force microscope. The optical properties of the films were studied to determine the optical constants (refractive index and bandgap). (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：130 / 136

页数：7

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