Doping-level-dependent optical properties of GaN:Mn

被引：29
作者：
Gelhausen, O [1 ]
Malguth, E
Phillips, MR
Goldys, EM
Strassburg, M
Hoffmann, A
Graf, T
Gjukic, M
Stutzmann, M
机构：
[1] Univ Technol Sydney, Microstruct Anal Unit, Broadway, NSW 2007, Australia
[2] Macquarie Univ, Div Informat & Commun Sci, N Ryde, NSW 2109, Australia
[3] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
[4] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany
来源：
APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 22期
关键词：
D O I：
10.1063/1.1757641
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The optical properties of molecular-beam-epitaxy-grown GaN with different Mn-doping levels (5-23x10(19) cm(-3)) were studied by cathodoluminescence (CL) and optical transmission spectroscopy. Transmission measurements at 2 K revealed an absorption peak at 1.414+/-0.002 eV, which was attributed to an internal T-5(2)-->E-5 transition of the neutral Mn3+ state. The intensity of this Mn-related transmission peak was found to scale with the Mn3+ concentration. The CL measurements showed that Mn-doping concentrations around 10(20) cm(-3) reduced the near band edge emission intensity by around one order of magnitude. A complete quenching of the donor-acceptor-pair band at 3.27 eV and strong decrease of the yellow luminescence centered at 2.2 eV were attributed to a reduced concentration of V-Ga. In the infrared spectral range of 0.8-1.4 eV three broad, Mn-doping related CL emission bands centered at 1.01+/-0.02, 1.09+/-0.02, and 1.25+/-0.03 eV were observed. Their origin is attributed to deep donor complexes, which are generated as a result of the heavy Mn-doping. (C) 2004 American Institute of Physics.
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页码：4514 / 4516
页数：3
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