Field Emission Properties of a Three-Dimensional Network of Single-Walled Carbon Nanotubes Inside Pores of Porous Silicon

被引：4
作者：
Lee, Jungwoo
Park, Taehee
Lee, Jongtaek
Yi, Whikun [1 ]
机构：
[1] Hanyang Univ, Res Inst Nat Sci, Seoul 133791, South Korea
来源：
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2014年 / 14卷 / 08期
关键词：
Porous Silicon; Single-Walled Carbon Nanotube; Field Emission; Stability; ARRAYS; GROWTH;
D O I：
10.1166/jnn.2014.8321
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
We report characteristic field emission (FE) properties of single-walled carbon nanotubes (SWCNTs) synthesized inside the pores as well as on the top surface of a porous silicon (PS) substrate. Turn-on fields and emission current densities were measured and compared with those of other types of SWCNTs in similar environments. Investigation of the FE properties of SWCNTs synthesized inside the pores of a PS substrate revealed a low turn-on field of approximately 2.25 V/mu m at 10 mu A/cm(2) and a high field-enhancement factor (6182) compared with other samples. A life-time stability test was performed by monitoring the current density before and after repeated exposure to O-2, suggesting that the pore channel can effectively prevent O-2(+) ion etching from destroying SWCNTs within the pores of the PS layer.
引用
收藏
页码：6221 / 6225
页数：5
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