Field Emission Properties of a Three-Dimensional Network of Single-Walled Carbon Nanotubes Inside Pores of Porous Silicon

We report characteristic field emission (FE) properties of single-walled carbon nanotubes (SWCNTs) synthesized inside the pores as well as on the top surface of a porous silicon (PS) substrate. Turn-on fields and emission current densities were measured and compared with those of other types of SWCNTs in similar environments. Investigation of the FE properties of SWCNTs synthesized inside the pores of a PS substrate revealed a low turn-on field of approximately 2.25 V/mu m at 10 mu A/cm(2) and a high field-enhancement factor (6182) compared with other samples. A life-time stability test was performed by monitoring the current density before and after repeated exposure to O-2, suggesting that the pore channel can effectively prevent O-2(+) ion etching from destroying SWCNTs within the pores of the PS layer.