Spectral response design of hydrogenated amorphous silicon p-i-n diodes for ambient light sensing

被引:6
作者
Tan, S. S. [1 ]
Liu, C. Y. [1 ]
Jiang, Yeu-Long [2 ]
Lin, Der-Yu [3 ]
Hsu, Klaus Y. J. [1 ]
机构
[1] Natl Tsing Hua Univ, Inst Elect Engn, Hsinchu 30013, Taiwan
[2] Natl Chung Hsing Univ, Dept Elect Engn, Taichung 40227, Taiwan
[3] Natl Changhua Univ Educ, Dept Elect Engn, Changhua 50074, Peoples R China
关键词
amorphous semiconductors; elemental semiconductors; hydrogen; photodetectors; p-i-n diodes; silicon;
D O I
10.1063/1.3125250
中图分类号
O59 [应用物理学];
学科分类号
摘要
For the applications involving ambient light sensing, the spectral response of photodetectors is required to mimic that of human eyes and the cost must be low. This paper discusses the layer structure design of human-eye-like hydrogenated amorphous silicon (a-Si:H) p-i-n photodiodes. The resultant sample devices are insensitive to infrared light and have a normal spectral response in the light band ranging between 400 nm wavelength and 740 nm wavelength. The spectrum peak locates around 560 nm wavelength, similar to the case of human eyes. The devices are suitable for low-cost ambient light sensing applications.
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页数:3
相关论文
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