Improved measurement capabilities at the NIST EUV Reflectometry Facility

被引:5
|
作者
Tarrio, C. [1 ]
Grantham, S. [1 ]
Germer, T. A. [1 ]
Rife, J. [1 ]
Lucatorto, T. B. [1 ]
Kriese, M. [2 ]
Platonov, Y. [2 ]
Jiang, L. [2 ]
Rodriguez, J. [2 ]
机构
[1] NIST, Sensor Sci Div, 100 Bur Dr,Stop 8411, Gaithersburg, MD 20899 USA
[2] Rigaku Innovat Technol, Auburn Hills, MI 48326 USA
来源
EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY V | 2014年 / 9048卷
关键词
Extreme ultraviolet; at-wavelength metrology; collector optics; source metrology;
D O I
10.1117/12.2046290
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The NIST Extreme Ultraviolet (EUV) Reflectometry Facility was designed in the 1990s to accommodate the largest multilayer optics envisioned at that time. However, with increasing power requirements for an EUV scanner, source collection optics have grown larger and more steeply curved than the original design would allow. To accommodate these changes, the mechanical and operational parameters of the facility have been upgraded. To access the entire surface of a larger optic, an auxiliary off-axis rotation stage has been installed allowing an increase in maximum optic size from 350 mm to 450 mm. Likewise, to deal with the deeper sags and steeper slopes of these optics, we have had to significantly expand our data analysis capabilities. In order to make these measurements, the incident radiation is reflected out of the vertical plane, allowing for measurements of effectively unpolarized radiation, an advantage for EUV lithography optics such as source collectors.
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页数:8
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