High-Efficiency Power Conversion Using Silicon Carbide Power Electronics

被引：5

作者：

Nee, H. -P. ^{[1
]}

Rabkowski, J. ^{[1
]}

Peftitsis, D. ^{[1
]}

Tolstoy, G. ^{[1
]}

Colmenares, J. ^{[1
]}

Sadik, D. ^{[1
]}

Bakowski, M. ^{[2
]}

Lim, J. -K. ^{[2
]}

Antonopoulos, A. ^{[1
]}

Angquist, L. ^{[1
]}

Zdanowski, M. ^{[3
]}

机构：

[1] KTH Royal Inst Technol, EES E2C, SE-10044 Stockholm, Sweden

[2] Acreo AB, SE-16440 Kista, Sweden

[3] Warsaw Univ Technol, PL-00661 Warsaw, Poland

来源：

SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2 | 2014年 / 778-780卷

关键词：

Power Electronics; Inverter; dc-dc converter; gate-drive circuit; reverse conduction; SiC JFET; SiC BJT; SiC MOSFET; parallel connection; modular multilevel converter; TRANSISTORS; INVERTER;

D O I：

10.4028/www.scientific.net/MSF.778-780.1083

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The message of this paper is that the silicon carbide power transistors of today are good enough to design converters with efficiencies and switching speeds beyond comparison with corresponding technology in silicon. This is the time to act. Only in the highest power range the devices are missing. Another important step towards high powers is to find new solutions for multi-chip circuit designs that are adapted to the high possible switching speeds of unipolar silicon carbide power transistors.

引用

页码：1083 / +

页数：2

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