500 Gbit/s optical gate monolithically integrating photodiode and electroabsorption modulator

被引：28

作者：

Kodama, S ^{[1
]}

Yoshimatsu, T ^{[1
]}

Ito, H ^{[1
]}

机构：

[1] NTT Corp, Photon Labs, Kanagawa 2430198, Japan

来源：

ELECTRONICS LETTERS | 2004年 / 40卷 / 09期

关键词：

D O I：

10.1049/el:20040391

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Optical demultiplexing at a corresponding data rate of 500 Gbit/s has been achieved using an ultrafast monolithic optical gate integrating a photodiode and an electroabsorption modulator. The on/off ratio is 9 dB for adjacent channels and larger than 20 dB for other channels.

引用

页码：555 / 557

页数：3

共 7 条

[1]

CHOU H, 2003, TECH DIG OPT FIB C O, V2, P583

[2]

ISHIBASHI T, 1997, OSA TOPS ULTRAFAST E, V13, P83

[3] Polarisation-insensitive travelling-wave electrode electroabsorption (TW-EA) modulator with bandwidth over 50GHz and driving voltage less than 2V [J].