The optical analyses of the multilayer transparent electrode and the formation of ITO/Mesh-Ag/ITO multilayers for enhancing an optical transmittance

被引:32
作者
Lee, Seung Yong [1 ]
Cho, Eou-Sik [1 ]
Kwon, Sang Jik [1 ]
机构
[1] Gachon Univ, Dept Elect Engn, 1342 Seongnam Daero, Seongnam City 461701, Gyeonggi Do, South Korea
基金
新加坡国家研究基金会;
关键词
Transparent conductive oxide; ITO/Ag/ITO; In-line sputtering; Full-wave simulation; Mesh structure; ITO/Mesh-Ag/ITO multiple layers; AG; FILMS; ITO; METALS;
D O I
10.1016/j.apsusc.2019.05.106
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
As a highly conducive and transparent electrode, ITO/Ag/ITO multilayers are fabricated using an in-line sputtering method. Optimal thickness conditions have been investigated in terms of optical transmittance and electrical conductance. Considering the optical properties, the experimental characteristics are analyzed based on theoretical phenomena and compared with the simulated results. The simulations are based on the finitedifference-time-domain (FDTD) method in solving linear Maxwell equations. The results showed that ITO/Ag/ITO structures with respective thicknesses of 39.2 nm/10.7 nm/39.2 nm are most suitable with an average transmittance of 87% calculated for wavelengths ranging from 400 to 800 nm and a sheet resistance of about 7.1 Omega/square. However, even with the optimum thickness conditions of the 'ITO/Ag/ITO' multilayers, the transmittances on some ranges of the visible wavelength were much lower than those of a single ITO layer. In order to improve the transmittance, Ag layer was formed with mesh structure. The transmittance and the sheet resistance in the ITO/Mesh-Ag/ITO multilayer structure were analyzed depending on the open ratio. As a result, a trade off in the open ratio was necessary in order to obtain the transmittance as high as possible and the sheet resistance as possible low. By the experiments, we found out that the transmittance was nearly same as the single ITO layer and the sheet resistance was about 30 Omega/square when the open ratio was about 85%.
引用
收藏
页码:990 / 999
页数:10
相关论文
共 28 条
  • [1] Characteristics of ITO-resistive touch film deposited on a PET substrate by in-line DC magnetron sputtering
    Ahn, Min Hyung
    Cho, Eou Sik
    Kwon, Sang Jik
    [J]. VACUUM, 2014, 101 : 221 - 227
  • [2] Structural, optical and electrical characterization of ITO, ITO/Ag and ITO/Ni transparent conductive electrodes
    Ali, Ahmad Hadi
    Shuhaimi, Ahmad
    Hassan, Zainuriah
    [J]. APPLIED SURFACE SCIENCE, 2014, 288 : 599 - 603
  • [3] Ag nanowire-embedded ITO films as a near-infrared transparent and flexible anode for flexible organic solar cells
    Choi, Kwang-Hyuk
    Kim, Jihoon
    Noh, Young-Jin
    Na, Seok-In
    Kim, Han-Ki
    [J]. SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2013, 110 : 147 - 153
  • [4] Transparent thin-film transistors with zinc indium oxide channel layer
    Dehuff, NL
    Kettenring, ES
    Hong, D
    Chiang, HQ
    Wager, JF
    Hoffman, RL
    Park, CH
    Keszler, DA
    [J]. JOURNAL OF APPLIED PHYSICS, 2005, 97 (06)
  • [5] OPTICAL PROPERTIES OF AG AND CU
    EHRENREICH, H
    PHILIPP, HR
    [J]. PHYSICAL REVIEW, 1962, 128 (04): : 1622 - +
  • [6] Transparent conductive ITO/Ag/ITO multilayer electrodes deposited by sputtering at room temperature
    Guillen, C.
    Herrero, J.
    [J]. OPTICS COMMUNICATIONS, 2009, 282 (04) : 574 - 578
  • [7] Infrared surface plasmon resonance of AZO-Ag-AZO sandwich thin films
    Guske, Joshua T.
    Brown, Jeff
    Welsh, Alex
    Franzen, Stefan
    [J]. OPTICS EXPRESS, 2012, 20 (21): : 23215 - 23226
  • [8] Hecht E., 2017, OPTICS, P441
  • [9] Effect of Ag thickness on electrical transport and optical properties of indium tin oxide-Ag-indium tin oxide multilayers
    Indluru, A.
    Alford, T. L.
    [J]. JOURNAL OF APPLIED PHYSICS, 2009, 105 (12)
  • [10] Transmission electron microscopy study of degradation in transparent indium tin oxide/Ag/indium tin oxide multilayer films
    Jeong, Jin-A
    Kim, Han-Ki
    Koo, Hyun-Woo
    Kim, Tae-Woong
    [J]. APPLIED PHYSICS LETTERS, 2013, 103 (01)