Carrier-gas dependence of ELO GaN grown by hydride VPE

被引：22

作者：

Miyake, H

Bohyama, S

Fukui, M

Hiramatsu, K

Iyechika, Y

Maeda, T

机构：

[1] Mie Univ, Dept Elect & Elect Engn, Tsu, Mie 5148507, Japan

[2] Sumitomo Chem Co Ltd, Tsukuba Res Lab, Tsukuba, Ibaraki 3003294, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2002年 / 237卷 / 1-4 II期

基金：

日本学术振兴会;

关键词：

hydride vapor phase epitaxy; nitrides;

D O I：

10.1016/S0022-0248(01)02126-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The morphological change of epitaxial lateral overgrowth (ELO) GaN during the hydride vapor phase epitaxy process has been investigated from the viewpoint of the effect of carrier-gas species. The lateral growth rates for using the carrier gas of only N-2 are higher than those for using the H-2 + N-2 mixed carrier gas. In the case of SiO2 stripe masks along the <1 (1) over bar 00> direction of the underlying GaN, {11 (2) over bar2} and {33 (6) over bar2} facets are observed in the sidewalls of ELO GaN for using the H-2 + N-2 mixed carrier gas. Results of cathodoluminescence and X-ray diffraction measurements suggest the crystal quality of the ELO GaN grown in the H-2 + N-2 mixed carrier gas is better than that in the N-2 carrier gas. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：1055 / 1059

页数：5

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