Tunneling spectroscopy of graphene and related reconstructions on SiC(0001)

被引:19
作者
Nie, Shu [1 ]
Feenstra, R. M. [1 ]
机构
[1] Carnegie Mellon Univ, Dept Phys, Pittsburgh, PA 15213 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2009年 / 27卷 / 04期
基金
美国国家科学基金会;
关键词
adsorbed layers; Fermi level; graphene; scanning tunnelling microscopy; scanning tunnelling spectroscopy; silicon compounds; surface conductivity; surface reconstruction; surface states; wide band gap semiconductors; ELECTRONIC-STRUCTURE; SURFACE-STRUCTURE; 6H-SIC(0001); GRAPHITE;
D O I
10.1116/1.3071977
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The 5x5,6 root 3x6 root 3-R30 degrees and graphene-covered 6 root 3x6 root 3-R30 degrees reconstructions of the SiC(0001) surface are studied by scanning tunneling microscopy and spectroscopy. For the 5x5 structure a rich spectrum of surface states is obtained, with one state, in particular, found to be localized on top of structural protrusions (adatoms) observed on the surface. Similar spectra are observed on the bare 6 root 3x6 root 3-R30 degrees reconstruction, and in both cases the spectra display nearly zero conductivity at the Fermi level. When graphene covers the 6 root 3x6 root 3-R30 degrees surface the conductivity at the Fermi level shows a marked increase, and additionally the various surface state peaks seen in the spectrum shift in energy and fall in intensity. The influence of the overlying graphene on the electronic properties of the interface is discussed, as are possible models for the interface structure.
引用
收藏
页码:1052 / 1057
页数:6
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