Room-temperature luminescence from rare-earth ions implanted into Si nanocrystals

被引:14
作者
Franzò, G
Vinciguerra, V
Priolo, F
机构
[1] CNR, Ist Metodol & Tecnol Microelettron, I-95121 Catania, Italy
[2] Univ Catania, Ist Nazl Fis Mat, I-95129 Catania, Italy
[3] Univ Catania, Dipartmento Fis, I-95129 Catania, Italy
来源
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 2000年 / 80卷 / 04期
关键词
D O I
10.1080/13642810008209778
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Efficient room-temperature luminescence from rare earths contained in Si nanocrystals is reported. Si nanocrystals were formed by high-dose Si implantation into SiO2 followed by high-temperature annealing. Er implantation was then performed both in pure SiO2 and in SiO2 containing the nanocrystals. Luminescence measurements showed that the Er signal at 1.54 mu m is two orders of magnitude higher in the sample containing the nanocrystals than in pure SiO2. Excitation spectroscopy demonstrated that, while within SiO2 Er is excited through direct photon absorption, excitation within the nanocrystals occurs via an efficient carrier-mediated process. These data demonstrate that the non-radiative processes usually limiting Er luminescence in Si are almost absent within the nanocrystals. Extension to other rare earths (namely Tm, Yb and Nd) is reported showing that the wavelength of emission can be properly tuned. The implications of these results are discussed.
引用
收藏
页码:719 / 728
页数:10
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