Degenerately Mo-doped In2O3 nanowire arrays on In2O3 microwires with metallic behaviors

被引：4
作者：
Wan, Qing [1 ,2 ,3 ]
Huang, Jin [1 ,2 ]
Lu, Aixia [1 ,2 ]
Sun, Jia [1 ,2 ]
机构：
[1] Hunan Univ, Key Lab Micronano Optoelect Devices, Minist Educ, Changsha 410082, Peoples R China
[2] Hunan Univ, State Key Lab Chemo Biosensing & Chemometr, Changsha 410082, Peoples R China
[3] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China
来源：
JOURNAL OF APPLIED PHYSICS | 2009年 / 106卷 / 02期
基金：
中国国家自然科学基金;
关键词：
TRANSPARENT CONDUCTING OXIDES; GROWTH;
D O I：
10.1063/1.3177334
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Transparent metallic Mo-doped In2O3 nanowires arrays with three dimensionally branched morphology are epitaxially grown on undoped In2O3 microwires by the vapor-liquid-solid growth mode. The room-temperature resistivity and failure-current density of individual degenerately doped nanowire are measured to be 1.43 X 10(-4) Omega cm and 1.57 X 10(7) A/cm(2), respectively. The breakdown mechanism of the nanowires at high current density is due to resistive heating and melting. Lateral vacuum electron field emission properties of individual nanowire tip are investigated and an ultralow turn-on voltage of 1.28 V and a large field enhancement factor of 1.02 X 10(3) are obtained. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3177334]
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页数：4
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