Magnetic Properties of Pure and Doped Gallium Nitride Nanocrystals

被引：3
作者：
Kumar, Dinesh [1 ]
Singh, Karamjit [1 ]
Bhatti, H. S. [1 ]
机构：
[1] Punjabi Univ, Dept Phys, Patiala 147002, Punjab, India
来源：
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2017年 / 17卷 / 01期
关键词：
Gallium Nitride Nanocrystals; Doping; Crystallography; Magnetic Properties; OPTICAL CHARACTERIZATION; THIN-FILMS; FERROMAGNETISM; GAN; HEXAMETHYLDISILAZANE; GAMNN;
D O I：
10.1166/jnn.2017.13050
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
In the present paper, Ga1-xCoxN, Ga1-xNixN and Ga1-xTbxN (0 <= x <= 0.1) nanocrystals have been synthesized by a facile solvothermal method. Crystallographic characterization of synthesized materials has been done using powder X-ray diffraction technique. Recorded diffraction patterns reveal the formation of wurtzite (hexagonal) structured GaN nanocrystals. Electron microscopic studies have been carried for the detailed topographical and morphological analyses of synthesized nanomaterials. Recorded electron micrographs indicate the formation of nearly mono-disperse nanoparticles, having average size similar to 4 nm. Magnetic measurements of doped nanocrystals revealed ferromagnetic behavior at room temperature however pure GaN is diamagnetic at room temperature.
引用
收藏
页码：651 / 655
页数：5
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