HALL EFFECT AND MAGNETORESISTANCE INVESTIGATION OF FAST ELECTRON IRRADIATED SILICON

被引：2

作者：

Mekys, A. ^{[1
]}

Rumbauskas, V. ^{[1
]}

Storasta, J. ^{[1
]}

Makarenko, L. ^{[2
]}

Kazuchits, N. ^{[2
]}

Vaitkus, J. V. ^{[1
]}

机构：

[1] Vilnius Univ, Inst Mat Sci & Appl Res, LT-10222 Vilnius, Lithuania

[2] Byelorussian State Univ, BY-240040 Minsk, BELARUS

来源：

LITHUANIAN JOURNAL OF PHYSICS | 2014年 / 54卷 / 02期

关键词：

magnetoresistivity; silicon; electron irradiation; mobility; DETECTORS;

D O I：

10.3952/lithjphys.54204

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A set of n-type silicon samples has been irradiated by 6.6 MeV electrons with doses from 1 to 5 (x 10(16)) e/cm(2), and temperature dependences of Hall and magnetoresistance mobilities were measured. The ratio of magnetoresistance and Hall mobilities was found equal to 1.15 +/- 0.25. The correspondence of the data measured by both methods opened the possibility of measurement of electron mobility in semiconductors with microinhomogeneities by magnetoresistance effect investigation.

引用

页码：94 / 98

页数：5

共 50 条

[1] Defect analysis in fast electron irradiated silicon by Hall and magnetoresistivity means
Mekys, Algirdas
Rumbauskas, Vytautas
Storasta, Jurgis
Makarenko, Leonid
Vaitkus, Juozas Vidmantis
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2014, 338 : 95 - 100
[2] ELECTRON HALL EFFECT IN SILICON DIOXIDE
GOODMAN, AM
PHYSICAL REVIEW, 1967, 164 (03): : 1145 - &
[3] POLAR HALL-EFFECT AND MAGNETORESISTANCE IN N-SILICON
HEINRICH, H
KRIECHBAUM, M
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1972, 50 (01): : K45 - +
[4] Investigation of carrier removal in electron irradiated silicon diodes
Taylor, SJ
Yamaguchi, M
Matsuda, S
Hisamatsu, T
Kawasaki, O
JOURNAL OF APPLIED PHYSICS, 1997, 82 (07) : 3239 - 3249
[5] Investigation of silicon defects parameters in electron irradiated diodes
Visniakov, J.
Marcinkevicius, A. J.
ELEKTRONIKA IR ELEKTROTECHNIKA, 2007, (04) : 13 - 16
[6] HALL-MOBILITY IN P-TYPE SILICON IRRADIATED WITH FAST ELECTRONS
BEZLYUDNYI, SV
KOLESNIKOV, NV
SHIK, AY
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (10): : 1116 - 1117
[7] HALL MOBILITY IN p-TYPE SILICON IRRADIATED WITH FAST ELECTRONS.
Bezlyudnyi, S.V.
Kolesnikov, N.V.
Shik, A.Ya.
1977, 11 (10): : 1116 - 1117
[8] Hall effect analysis in irradiated silicon samples with different resistivities
Borchi, E
Bruzzi, M
Dezillie, B
Lazanu, S
Li, Z
Pirollo, S
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1999, 46 (04) : 834 - 838
[9] TRANSMISSION ELECTRON MICROSCOPY OF FAST-NEUTRON-IRRADIATED SILICON
HEMMENT, PLF
GUNNERSE.EM
JOURNAL OF APPLIED PHYSICS, 1966, 37 (07) : 2912 - &
[10] CV and Hall effect analysis on neutron irradiated silicon detectors
Biggeri, U
Borchi, E
Bruzzi, M
Lazanu, S
Li, Z
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1997, 388 (03): : 330 - 334

← 1 2 3 4 5 →