Bistable resistance switching in surface-oxidized C12A7:e- single-crystal

被引：18
作者：
Adachi, Yutaka [2 ]
Kim, Sung-Wng [2 ]
Kamiya, Toshio [1 ,2 ]
Hosono, Hideo [1 ,2 ]
机构：
[1] Tokyo Inst Technol, Frontier Res Ctr, Midori Ku, ERATO SORST,Japan Sci & Technol Agcy, Yokohama, Kanagawa 2268503, Japan
[2] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan
来源：
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | 2009年 / 161卷 / 1-3期
关键词：
C12A7; Oxygen ion conduction; Reduction treatment; Electric field doping; Resistive random access memory (ReRAM); Resistance switching;
D O I：
10.1016/j.mseb.2008.11.042
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
12CaO center dot 7Al(2)O(3) (C12A7) is a typical band insulator, but may be converted to a metallic conductor C12A7:e(-) by electron-doping via removal of free oxygen ions sitting in the subnanometer-sized cages as the counter ions. Also, C12A7 is known as a fast oxygen ion conductor. These unique features let us expect that it would be possible to dope electrons to C12A7 by removing the free oxygen ions by an external electric field. in this Study, we fabricated C12A7/C12A7:e(-) stacking devices and examined their current-voltage characteristics. The thickness of the top C12A7 layer was controlled by low-temperature oxidation with an aid of an optical model analysis of spectroscopic ellipsometry. We found that the C12A7/C12A7:e(-) devices exhibited a bistable resistance switching effect with an on-to-off resistance ratio of similar to 10(2) and operated as a resistive random access memory. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：76 / 79
页数：4
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