3ω thermal conductivity measurements of thin film dielectrics on silicon for use in cantilever-based IR imaging

被引：1

作者：

Jones, C. D. W. ^{[1
]}

Pardo, F. ^{[1
]}

Pai, C-S. ^{[1
]}

Bower, J. E. ^{[1
]}

Miner, J. F. ^{[1
]}

Klemens, F. P. ^{[1
]}

Cirelli, R. A. ^{[1
]}

Ferry, E. J. ^{[1
]}

Taylor, J. A. ^{[1
]}

Baker, M. R. ^{[1
]}

Dennis, B. S. ^{[1
]}

Mansfield, W. M. ^{[1
]}

Kornblit, A. ^{[1
]}

Keller, R. C. ^{[1
]}

Gates, J. V. ^{[1
]}

Ramirez, A. P. ^{[1
]}

机构：

[1] Alcatel Lucent, Bell Labs, Murray Hill, NJ 07974 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2009年 / 27卷 / 03期

关键词：

dielectric thin films; plasma CVD; silicon compounds; thermal conductivity;

D O I：

10.1116/1.3137962

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1207 / 1210

页数：4

共 35 条

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