3ω thermal conductivity measurements of thin film dielectrics on silicon for use in cantilever-based IR imaging

被引：1
|
作者：
Jones, C. D. W. [1 ]
Pardo, F. [1 ]
Pai, C-S. [1 ]
Bower, J. E. [1 ]
Miner, J. F. [1 ]
Klemens, F. P. [1 ]
Cirelli, R. A. [1 ]
Ferry, E. J. [1 ]
Taylor, J. A. [1 ]
Baker, M. R. [1 ]
Dennis, B. S. [1 ]
Mansfield, W. M. [1 ]
Kornblit, A. [1 ]
Keller, R. C. [1 ]
Gates, J. V. [1 ]
Ramirez, A. P. [1 ]
机构：
[1] Alcatel Lucent, Bell Labs, Murray Hill, NJ 07974 USA
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2009年 / 27卷 / 03期
关键词：
dielectric thin films; plasma CVD; silicon compounds; thermal conductivity;
D O I：
10.1116/1.3137962
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1207 / 1210
页数：4
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