Ultrathin silicon oxide film growth with in situ passivation by using pyrolytic N2O

被引：7

作者：

Yamada, H ^{[1
]}

机构：

[1] NTT Corp, Telecommun Energy Labs, Kanagawa 2430198, Japan

来源：

JOURNAL OF MATERIALS SCIENCE LETTERS | 2002年 / 21卷 / 19期

关键词：

D O I：

10.1023/A:1020084012177

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

To make strong bonds, a new in situ passivation method which uses a little pyrolytic N2O gas during ultra-dry oxidation at less than 1 ppb humidity was developed. The method, so-called pyrolytic-gas passivation (PGP), was applied to gate oxide formation. As a result, the condition of the oxide-substrate interface was improved.

引用

页码：1493 / 1495

页数：3

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