Ultrathin silicon oxide film growth with in situ passivation by using pyrolytic N2O

被引：7
作者：
Yamada, H [1 ]
机构：
[1] NTT Corp, Telecommun Energy Labs, Kanagawa 2430198, Japan
来源：
JOURNAL OF MATERIALS SCIENCE LETTERS | 2002年 / 21卷 / 19期
关键词：
D O I：
10.1023/A:1020084012177
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
To make strong bonds, a new in situ passivation method which uses a little pyrolytic N2O gas during ultra-dry oxidation at less than 1 ppb humidity was developed. The method, so-called pyrolytic-gas passivation (PGP), was applied to gate oxide formation. As a result, the condition of the oxide-substrate interface was improved.
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页码：1493 / 1495
页数：3
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