Ultraviolet photodetectors based on selectively grown ZnO nanorod arrays

被引：183

作者：

Ji, L. W. ^{[1
]}

Peng, S. M. ^{[2
,3
]}

Su, Y. K. ^{[2
,3
]}

Young, S. J. ^{[2
,3
]}

Wu, C. Z. ^{[1
]}

Cheng, W. B. ^{[1
]}

机构：

[1] Natl Formosa Univ, Inst Electroopt & Mat Sci, Yunlin 632, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 701, Taiwan

[3] Natl Cheng Kung Univ, Inst Microelect, Tainan 701, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 20期

关键词：

adsorption; metal-semiconductor-metal structures; nanostructured materials; photodetectors; photolithography; ultraviolet detectors; zinc compounds; ROOM-TEMPERATURE; FABRICATION; SENSORS;

D O I：

10.1063/1.3141447

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors with ZnO nanorods (NRs) have been fabricated and characterized in this investigation. The NR arrays were selectively grown on the gap of interdigitated electrodes by chemical solution method through a photolithography process. Compared to a traditional ZnO MSM photodetector with no NRs, the fabricated NR UV photodetector showed much higher photoresponsity. As a result, it can be attributed to high surface-to-volume ratio of ZnO NRs and such a high photoresponse could strongly depend on oxygen adsorption/desorption process in the presence of trap states at the NR surface.

引用

页数：3

共 19 条

[1] Optically pumped lasing of ZnO at room temperature [J].

Bagnall, DM ;

Chen, YF ;

Zhu, Z ;

Yao, T ;

Koyama, S ;

Shen, MY ;

Goto, T .

APPLIED PHYSICS LETTERS, 1997, 70 (17) :2230-2232

[2] Nanowire-based dye-sensitized solar cells [J].

Baxter, JB ;

Aydil, ES .

APPLIED PHYSICS LETTERS, 2005, 86 (05) :1-3

[3] Room-temperature ultraviolet nanowire nanolasers [J].

Huang, MH ;

Mao, S ;

Feick, H ;

Yan, HQ ;

Wu, YY ;

Kind, H ;

Weber, E ;

Russo, R ;

Yang, PD .

SCIENCE, 2001, 292 (5523) :1897-1899

[4] Buckling characterization of vertical ZnO nanowires using nanoindentation [J].

Ji, Liang-Wen ;

Young, Sheng-Joue ;

Fang, Te-Hua ;

Liu, Chien-Hung .

APPLIED PHYSICS LETTERS, 2007, 90 (03)

[5] Ultraviolet Schottky detector based on epitaxial ZnO thin film [J].

Jiang, Dayong ;

Zhang, Jiying ;

Lu, Youming ;

Liu, Kewei ;

Zhao, Dongxu ;

Zhang, Zhenzhong ;

Shen, Dezhen ;

Fan, Xiwu .

SOLID-STATE ELECTRONICS, 2008, 52 (05) :679-682

[6] Solution-processed ultraviolet photodetedtors based on colloidal ZnO nanoparticles [J].

Jin, Yizheng ;

Wang, Jianpu ;

Sun, Baoquan ;

Blakesley, James C. ;

Greenham, Neil C. .

NANO LETTERS, 2008, 8 (06) :1649-1653

[7] Fabrication and device characterization of omega-shaped-gate ZnO nanowire field-effect transistors [J].

Keem, Kihyun ;

Jeong, Dong-Young ;

Kim, Sangsig ;

Lee, Moon-Sook ;

Yeo, In-Seok ;

Chung, U-In ;

Moon, Joo-Tae .

NANO LETTERS, 2006, 6 (07) :1454-1458

[8]

Kind H, 2002, ADV MATER, V14, P158, DOI 10.1002/1521-4095(20020116)14:2<158::AID-ADMA158>3.0.CO

[9]

2-W

[10] Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy [J].

Look, DC ;

Reynolds, DC ;

Litton, CW ;

Jones, RL ;

Eason, DB ;

Cantwell, G .

APPLIED PHYSICS LETTERS, 2002, 81 (10) :1830-1832

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