Discussion of the Epsilon-Near-Zero Effect of Graphene in a Horizontal Slot Waveguide

被引:55
作者
Kwon, Min-Suk [1 ]
机构
[1] Ulsan Natl Inst Sci & Technol UNIST, Sch Elect & Comp Engn, Ulsan 689798, South Korea
来源
IEEE PHOTONICS JOURNAL | 2014年 / 6卷 / 03期
基金
新加坡国家研究基金会;
关键词
Waveguide devices; optical properties of photonic materials; graphene; PHOTODETECTOR;
D O I
10.1109/JPHOT.2014.2326667
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Horizontal slot waveguides based on graphene have been considered an attractive structure for optical waveguide modulators for transverse magnetic (TM) modes. Graphene is embedded in the slot region of a horizontal slot waveguide. If graphene were treated as an isotropic material and its dielectric constant were made close to zero by adjusting its Fermi level, the surface-normal electric field component of the fundamental TM mode of a horizontal slot waveguide might be highly enhanced in graphene. This could cause a large increase in the attenuation coefficient of the mode. This is called the epsilon-near-zero (ENZ) effect. This paper discusses that graphene needs to be treated as an anisotropic material that has an almost real surface-normal dielectric constant component. Then, the ENZ effect does not exist. Approximate analytic expressions and numerical simulation are used for the discussion, and they demonstrate that horizontal slot waveguides are not appropriate for graphene-based modulators for TM modes.
引用
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页数:9
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