Mid-infrared Plasmonic Antennas made of Electron-doped Epitaxial Germanium-on-Silicon

被引：0

作者：

Ortolani, Michele ^{[1
]}

Baldassarre, Leonetta ^{[2
]}

Nucara, Alessandro ^{[1
]}

Samarelli, Antonio ^{[3
]}

Paul, Douglas J. ^{[3
]}

Frigerio, Jacopo ^{[4
]}

Isella, Giovanni ^{[4
]}

Finazzi, Marco ^{[5
]}

Biagioni, Paolo ^{[5
]}

机构：

[1] Univ Roma La Sapienza, Dept Phys, Rome, Italy

[2] Ist Italiano Tecnol, Ctr Life NanoSci Sapienza, Rome, Italy

[3] Univ Glasgow, Sch Engn, Glasgow, Lanark, Scotland

[4] Politecn Milan, L NESS, Como, Italy

[5] Politecn Milan, Dept Phys, Milan, Italy

来源：

2013 38TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ) | 2013年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We are developing an all-semiconductor plasmonic platform for mid-infrared sensing which includes growth of epitaxial n-doped germanium films, spectroscopic test and electromagnetic design of plasmonic antennas.

引用

页数：2

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