Mid-infrared Plasmonic Antennas made of Electron-doped Epitaxial Germanium-on-Silicon

被引：0
|
作者：
Ortolani, Michele [1 ]
Baldassarre, Leonetta [2 ]
Nucara, Alessandro [1 ]
Samarelli, Antonio [3 ]
Paul, Douglas J. [3 ]
Frigerio, Jacopo [4 ]
Isella, Giovanni [4 ]
Finazzi, Marco [5 ]
Biagioni, Paolo [5 ]
机构：
[1] Univ Roma La Sapienza, Dept Phys, Rome, Italy
[2] Ist Italiano Tecnol, Ctr Life NanoSci Sapienza, Rome, Italy
[3] Univ Glasgow, Sch Engn, Glasgow, Lanark, Scotland
[4] Politecn Milan, L NESS, Como, Italy
[5] Politecn Milan, Dept Phys, Milan, Italy
来源：
2013 38TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ) | 2013年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We are developing an all-semiconductor plasmonic platform for mid-infrared sensing which includes growth of epitaxial n-doped germanium films, spectroscopic test and electromagnetic design of plasmonic antennas.
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