Impedance spectroscopy study of metal-organic-metal structures

被引:8
作者
Bekkali, A [1 ]
Thurzo, I [1 ]
Kampen, TU [1 ]
Zahn, DRT [1 ]
机构
[1] Tech Univ Chemnitz, Inst Phys, D-09107 Chemnitz, Germany
关键词
organic semiconductors; Schottky barrier; interface states;
D O I
10.1016/j.apsusc.2004.05.063
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In this work we have investigated the dielectric properties of Ag/PTCDA/Ag structures using impedance spectroscopy (IS). An equivalent circuit is developed for the ac small-signal excitation with frequencies between 100 Hz-5 MHz. It is possible to fit the data at different dc biases without introducing any frequency-dependent element to the equivalent circuit. The space charge region at the bottom Ag contact strongly resembles Schottky-barrier behavior, while disorder induced interface dipoles seem to occur at the top Ag/PTCDA interface. For the latter one, the related energy distribution of density of states as deduced from the excess capacitance of this zone fairly matches a Gaussian profile. (C) 2004 Published by Elsevier B.V.
引用
收藏
页码:149 / 154
页数:6
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