Influence of sputtering parameters on the crystallinity and crystal orientation of AlN layers deposited by RF sputtering using the AlN target

被引：63

作者：

Vashaei, Z. ^{[1
]}

Aikawa, T. ^{[1
]}

Ohtsuka, M. ^{[1
]}

Kobatake, H. ^{[1
]}

Fukuyama, H. ^{[1
]}

Ikeda, S. ^{[2
]}

Takada, K. ^{[2
]}

机构：

[1] Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Aoba Ku, Sendai, Miyagi 9808577, Japan

[2] Tokuyama Corp, Div Res & Dev, Shibuya Ku, Tokyo 1508383, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2009年 / 311卷 / 03期

关键词：

Crystal structure; RF sputtering; Aluminum nitride; NITRIDE THIN-FILMS; GROWTH;

D O I：

10.1016/j.jcrysgro.2008.09.046

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Aluminum nitride (AlN) layers were grown on c-sapphire by radio frequency (RF) sputtering in plasma containing a Mixture of argon and nitrogen gas using an AlN target, The influence of nitrogen gas fraction, RF power, and sputtering pressure on crystalline quality and growth rate as well as surface morphology were investigated. Crystalline quality improves as nitrogen gas fraction and RF power increase. The growth rate increases as the RF power increases and decreases as the Sputtering pressure increases. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：459 / 462

页数：4

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