Three-dimensional metrology with side-wall measurement using tilt-scanning operation in digital probing AFM

被引:5
作者
Murayama, Ken [1 ]
Gonda, Satoshi
Koyanagi, Hajime
Terasawa, Tsuneo
机构
[1] Assoc Super Adv Elect Technol, MIRAI, AIST W-7,16-1 Onogawa, Tsukuba, Ibaraki 3058569, Japan
[2] Assoc Super Adv Elect Technol, MIRAI, Tsukuba, Ibaraki 3058569, Japan
[3] Natl Inst Adv Ind Sci & Technol, MIRAI, Tsukuba, Ibaraki, Japan
来源
METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XX, PTS 1 AND 2 | 2006年 / 6152卷
关键词
atomic force microscopy; sidewall measurement; tilted-tip; tilt-scanning; semiconductor surface; carbon nano tube; digital probing; AFM;
D O I
10.1117/12.654346
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
We have developed a new measurement techniques employing digital probing with AFM (Atomic Force Microscope) that can examine sidewalls of fine patterns. This new technique employs digital probing operations, such sample-tilt step-in operation, tilt-step-in operation with a sharpened tilted tip, and multi-angle step-in operation with a flared tip. Firstly, we examined the validity of digital probing operation using a carbon nanotube (CNT) tip, showing the measurement repeatability of approximately 1 nm (3 sigma) on a fine trench pattern with 50 nm width and 300 nm depth. After the slip calculation between the tilted-tip and the sidewall for the new sidewall measurement technique, we measured a perpendicular reference sidewall with two types of operations, namely, tilt-step-in and multi-angle step-in operations. We then obtained 3D images of ArF resist patterns that involved measurement of sidewall surface roughness. Finally, we demonstrated a possibility of extending the technique for measuring denser trench patterns by using sample-tilt method and a tilted CNT tip.
引用
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页数:8
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