The Synthesis of NiO/TiO2 Heterostructures and Their Valence Band Offset Determination

被引:22
作者
Ibupoto, Z. H. [1 ]
Abbasi, M. A. [1 ]
Liu, X. [2 ]
AlSalhi, M. S. [3 ,4 ]
Willander, M. [1 ]
机构
[1] Linkoping Univ, Dept Sci & Technol, Phys Elect & Nanotechnol Div, S-60174 Norrkoping, Sweden
[2] Linkoping Univ, Dept Phys Chem & Biol IFM, S-58183 Linkoping, Sweden
[3] King Saud Univ, Coll Sci, Dept Phys & Astron, Riyadh 11451, Saudi Arabia
[4] King Saud Univ, Res Chair Laser Diag Canc, Riyadh 11451, Saudi Arabia
关键词
CHEMICAL-VAPOR-DEPOSITION; TITANIA NANOTUBE ARRAYS; FILMS; NIO; DIOXIDE; SENSOR; PERFORMANCE; NANORODS; NITROGEN; DEFECTS;
D O I
10.1155/2014/928658
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In this work, a heterojunction based on p-type NiO/n-type TiO2 nanostructures has been prepared on the fluorine doped tin oxide (FTO) glass substrate by hydrothermal method. Scanning electron microscopy (SEM) and X-Ray diffraction techniques were used for the morphological and crystalline arrays characterization. The X-ray photoelectron spectroscopy was employed to determine the valence-band offset (VBO) of the NiO/TiO2 heterojunction prepared on FTO glass substrate. The core levels of Ni 2p and Ti 2p were utilized to align the valence-band offset of p-type NiO/n-type TiO2 heterojunction. The valence band offset was found to be similar to 0.41 eV and the conduction band was calculated about similar to 0.91 eV. The ratio of conduction band offset and the valence-band offset was found to be 2.21.
引用
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页数:6
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