3D Simulations on Surface Growth Via Chemical Vapour Deposition: Kinetic Monte Carlo Investigation

被引:0
|
作者
Thongon, Arjaree [1 ]
Choopun, Supab [1 ]
Yimnirun, Rattikorn [2 ]
Laosiritaworn, Yongyut [1 ]
机构
[1] Chiang Mai Univ, Fac Sci, Dept Phys & Mat Sci, Chiang Mai 50200, Thailand
[2] Suranaree Univ Technol, Inst Sci, Sch Phys, Nakhon Ratchasima, Thailand
关键词
Chemical vapour deposition; surface growth; kinetic Monte Carlo simulation; DIFFUSION; DYNAMICS;
D O I
10.1080/10584587.2014.905352
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this study, we used the kinetic Monte Carlo simulation to investigate the growth dynamic of the films on a substrate by imitating the chemical vapour deposition process. As a prototype, the system was confined into three-dimensional slap where the deposit chamber was divided into array grids. The vapour flowed in and out with varying rates and concentrations and the growth process took place on the substrate placed at the bottom of the array. Interaction among atoms was considered to take Ising-like, and Kawasaki algorithm is used in this study to observe the average thickness and its variance. The result shows that for the increasing temperature, the average thickness decreases at fixed rates and concentration. With increasing the rates, at fixed concentration, the average thickness decrease at low temperature. Furthermore, the average thickness greatly increases at low temperature with increasing the concentration, at fixed rates.
引用
收藏
页码:100 / 105
页数:6
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