Structural and electrical characteristics of HfO2 films fabricated by pulsed laser deposition

We investigated the structural and electrical characteristics of HfO2 films deposited by a pulsed laser deposition (PLD) method, It was found that the formation of interlayers at the HfO2/Si interface depends strongly on the oxygen pressure rather than the deposition temperature during PLD. Furthermore. we determined the electrical properties which are closely related to the structure and orientation of grains in the polycrystalline HfO2 films. It was, noted that randomly oriented HfO2 films have capacitance-voltage curves with no hysteresis and low leakage current.