Enlightening gallium nitride-based UV photodetectors

被引：73

作者：

Aggarwal, Neha ^{[1
]}

Gupta, Govind ^{[1
,2
]}

机构：

[1] CSIR Natl Phys Lab, Sensor Devices & Metrol Div, Dr KS Krishnan Rd, New Delhi 110012, India

[2] Acad Sci & Innovat Res, CSIR HRDC Campus, Ghaziabad 201002, Uttar Pradesh, India

来源：

JOURNAL OF MATERIALS CHEMISTRY C | 2020年 / 8卷 / 36期

关键词：

DEEP-ULTRAVIOLET PHOTODETECTOR; HIGH-RESPONSIVITY; ELECTRONIC-STRUCTURE; GAN; GROWTH; NANOSTRUCTURE; SURFACE; RATIO; REALIZATION; TEMPERATURE;

D O I：

10.1039/d0tc03219k

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This article highlights the emerging demand for gallium nitride (GaN) semiconductor technology that offers superior optoelectronic properties making it suitable for highly efficient ultraviolet (UV) photodetection devices. An overview of the required physical mechanisms and a background review of the latest approaches for highly responsive GaN-based UV photodetectors are compiled and the future perspective for optoelectronic devices is discussed. It was proposed that the GaN subfield is directed towards integration with two-dimensional materials for futuristic applications. Finally, this article provides open questions for future researchers and suggests a direction for possible solutions to the problems faced during the development of highly efficient optoelectronic devices.

引用

页码：12348 / 12354

页数：7

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