Structural defects in alpha-SiC single crystals grown by the modified-Lely method

Structural characterization of single crystalline alpha-SiC has been conducted by X-ray topography. Crystals were grown in the [<000(1)over bar>] and the [<1(1)over bar 00>] directions by the modified-Lely method, and wafers perpendicular and parallel to the growth directions sliced from the grown crystals were examined by transmission topographs of the tang method. The crystals grown in the [<000(1)over bar>] and the [<1(1)over bar 00>] directions showed a significant difference in both types and densities of crystal defects-Each growth direction exhibited a peculiar defect formation, and the topography revealed that most of the defects were formed at the very initial stage of growth.