Schottky-barrier photodiode using p-diamond epilayer grown on p+-diamond substrates

被引：11

作者：

Imura, Masataka ^{[1
]}

Liao, Meiyong ^{[2
]}

Alvarez, Jose ^{[3
,4
]}

Koide, Yasuo ^{[2
]}

机构：

[1] Natl Inst Mat Sci, World Premier Int WPI Res Ctr, Int Ctr Mat Nanoarchitecton MANA, Tsukuba, Ibaraki 3050044, Japan

[2] Natl Inst Mat Sci, Sensor Mat Ctr, Tsukuba, Ibaraki 3050044, Japan

[3] Univ Paris 06, Ecole Super Elect, CNRS, Lab Genie Elect Paris,UMR 8507, F-91192 Gif Sur Yvette, France

[4] Univ Paris 11, F-91192 Gif Sur Yvette, France

来源：

关键词：

Diamond; Schottky-barrier photodiode; Ib-type diamond substrate; p(+)-diamond substrate;

D O I：

10.1016/j.diamond.2008.10.065

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In order to understand a substrate effect on photoresponse properties of diamond-based Schottky-barrier photodiode (SPD), we utilize a heavily boron-doped p(+)-diamond substrate for a thin epilayer growth and the SPD fabrication. Vertical- and planar-types SPD's show excellent rectifying property with ideality factor close to unity and on-resistance as small as 1 Omega.cm(2). Both the SPD's are operable in photovoltaic and reverse bias modes with a quantum efficiency of 2.2 +/- 0.5% and does not provide a photoconductivity gain and a persistent photocurrent before and after annealing at 500 degrees C for 120 min. By comparing the photoresponse properties of SPD's on the p(+)-diamond substrate with on a Ib-diamond substrate, we conclude that a homojunction between p-diamond epilayer and Ib-diamond substrate governs a photo-carriers generation and a transport process, which produces an excellent spectral response property of SPD on the Ib-diamond substrate. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：296 / 298

页数：3

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