Optical and Structural Properties of InGaN-AlGaN Ultraviolet Light-Emitting Diodes

被引：3

作者：

Kim, Sang-Mook ^{[1
,2
]}

Kim, Jae Bum ^{[1
]}

Ain, Junggeun

Baek, Jong Hyeob ^{[1
]}

Lee, In Hwan ^{[3
,4
]}

Jung, Gun Young ^{[5
]}

机构：

[1] KOPTI, Kwangju 500460, South Korea

[2] Gwangju Inst Sci aid Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea

[3] Chonnbuk Natl Univ, Sch Adv Mat Engn, Chonju 61756, South Korea

[4] Chonnbuk Natl Univ, Res Ctr Adv Mat Dev, Chonju 61756, South Korea

[5] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2008年 / 20卷 / 21-24期

关键词：

AlGaN; flip-chip; light-emitting diodes (LEDs); patterned sapphire substrate (PSS); silicon optical bench (SiOB); ultraviolet (UV);

D O I：

10.1109/LPT.2008.2004700

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We fabricated and investigated the performances of InGaN-AlGaN ultraviolet (UV) light-emitting diodes (LEDs) emitting at 380 rim. The output power of a conventional LED, a patterned sapphire substrate LED (PSS LE D), and a PSS flip-chip LED (PSS FCLED) were about 0.94,1.86, and 5.18 mW, respectively, at a forward injection current of 20 mA. These results indicate that the light output-powers of the PSS LED and PSS FCLED were enhanced as much as 97% and 451 % compared to the conventional LED. Subsequent optical simulations confirm the remarkable enhancements, in optical power of the PSS FCLED at UV wavelengths.

引用

页码：1911 / 1913

页数：3

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