Intelligent Hybrid Gate Driver Design With Self-Adjusting Parameters for Short Circuit Protection

被引：0

作者：

Demiralay, Ibrahim Ethem ^{[1
]}

机构：

[1] Turkish Aerosp Ind, Havacilik Ave 17, TR-06980 Ankara, Turkey

来源：

2021 23RD EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'21 ECCE EUROPE) | 2021年

关键词：

Intelligent gate driver; Over-current protection; Silicon Carbide (SiC); Smart Gate Drivers;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

This article proposes a redesigned hybrid gate drive circuit to provide high applicability, relatively low cost, and fast protection for SiC devices.This circuit works with desaturation method and does not need to be redesigned according to operating conditions and device characteristics. It auto-tune the blanking time and Vdesat reference voltage.

引用

页数：7

共 15 条

[1]

[Anonymous], 2019, IGBT and SiC Gate Driver Fundamentals

[2]

[Anonymous], 2018, SIC MOSFETS GAT DRIV, P1

[3]

[Anonymous], 2016, IEEE APPL POW EL C E

[4]

Barazi Y, 2020, EUR CONF POW ELECTR, DOI 10.23919/EPE20ECCEEurope43536.2020.9215619

[5] An Improved IGBT Short-Circuit Protection Method With Self-Adaptive Blanking Circuit Based on VCE Measurement [J].

Chen, Min ;

Xu, Dehong ;

Zhang, Xingyao ;

Zhu, Nan ;

Wu, Junxiong ;

Rajashekara, Kaushik .

IEEE TRANSACTIONS ON POWER ELECTRONICS, 2018, 33 (07) :6126-6136

[6]

Jin Zhao, 2018, 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia), P1, DOI 10.1109/WiPDAAsia.2018.8734547

[7] Comparison and Discussion on Shortcircuit Protections for Silicon-Carbide MOSFET Modules: Desaturation Versus Rogowski Switch-Current Sensor [J].

Mocevic, Slavko ;

Wang, Jun ;

Burgos, Rolando ;

Boroyevich, Dushan ;

Jaksic, Marko ;

Stancu, Constantin ;

Peaslee, Brian .

IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, 2020, 56 (03) :2880-2893

[8]

Nguyen M.N., 2001, 13 IEEE INT PULS POW, P1

[9]

Ozdal A., 2019, 11 INT C EL EL ENG E

[10]

PAREJAEASTAWAY M, 2016, INT J HOUS POLICY, P1, DOI DOI 10.1145/2903150.2903180

← 1 2 →