Fano profile in intersubband transitions in InAs quantum dots

被引：18

作者：

Lelong, P

Lee, SW

Hirakawa, K

Sakaki, H

机构：

[1] Univ Tokyo, Inst Ind Sci, Minato Ku, Tokyo 106, Japan

[2] Japan Sci & Technol Corp, Toshima Ku, Tokyo 1710031, Japan

来源：

PHYSICA E | 2000年 / 7卷 / 1-2期

关键词：

InAs quantum dots; Fano resonance; quantum interference;

D O I：

10.1016/S1386-9477(99)00315-X

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have investigated the infrared photocurrent spectra due to bound-to-continuum intersubband transitions in self-assembled InAs/GaAs quantum dots. It is found that the observed photocurrent spectra exhibit a broad peak followed by a peculiar quenching of their intensity at photon energy around 370 meV. We theoretically demonstrate that such a strong modulation of the intersubband transition spectra is due to Fano resonance which results from the quantum mechanical interference within the continuum. The calculated intersubband transition spectrum is in excellent agreement with experiments. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

收藏

页码：174 / 178

页数：5

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