Fabrication of hollow thin films of yttria-stabilized zirconia by chemical vapor infiltration using NiO as oxygen source

被引：1
作者：
Kikuchi, Kenji
Matsuo, Kazuaki
Mineshige, Atsushi
Ogumi, Zempachi
机构：
[1] Univ Shiga Prefecture, Dept Mat Sci, Shiga 5228533, Japan
[2] Himeji Inst Technol, Dept Appl Chem, Himeji, Hyogo 6712201, Japan
[3] Kyoto Univ, Grad Sch Engn, Dept Energy & Hydracarbon Chem, Nishikyo Ku, Kyoto 6158510, Japan
来源：
SOLID STATE IONICS | 2006年 / 177卷 / 33-34期
关键词：
hollow yttria-stabilized zirconia; nickel oxide; chemical vapor infiltration; chemical vapor deposition; electrochemical vapor deposition;
D O I：
10.1016/j.ssi.2006.08.024
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Deposition of yttria-stabilized zirconia films on surface oxidized Ni wire substrate by chemical vapor infiltration (CVI) using ZrCl4 and YCl3 as metal sources and NiO as oxygen source were studied. The resultant films were cubic crystals of YSZ with a Y2O3 content of 1.0-3.7 mol%. The growth rate is larger than that obtained by conventional method of chemical vapor deposition (CVD), increased with the flow rate and decreased with diameter of NiO fiber. The growth rate above its thickness of 4 pm decreased with an increase in the oxidation temperature since the porosity of NiO wire might decrease with an increase in the oxidation temperature. Growth of YSZ films with the CVI method simultaneously involved CVD and electrochemical vapor deposition (EVD). (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：2903 / 2909
页数：7
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