Giant magnetoresistance response in Sr2FeMoO6 based organic spin valves

被引：13

作者：

Angervo, I ^{[1
]}

Saloaro, M. ^{[1
]}

Palonen, H. ^{[1
]}

Huhtinen, H. ^{[1
]}

Paturi, P. ^{[1
]}

Makela, T. ^{[2
]}

Majumdar, S. ^{[2
]}

机构：

[1] Univ Turku, Dept Phys & Astron, Wihuri Phys Lab, FI-20014 Turku, Finland

[2] VTT Tech Res Ctr Finland, FI-02044 Espoo, Finland

来源：

APPLIED SURFACE SCIENCE | 2022年 / 589卷

基金：

芬兰科学院;

关键词：

Sr2FeMoO6; Alq(3); Spin valve; Magnetoresistance; ROOM-TEMPERATURE MAGNETORESISTANCE; THIN-FILMS; INTERFACE; POLARIZATION;

D O I：

10.1016/j.apsusc.2022.152854

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We report the fabrication of the first Sr2FeMoO6 based organic spin valve device using Tris(8-hydroxyquinolinato) aluminum (Alq(3)) as a spin transport layer. The characterization of the device confirms hysteretic magnetoresistance with approximately 20%-30% switching between high and low resistance states at low temperatures. The results demonstrate that organic semiconductors can form a suitable interface with double perovskite, half metallic Sr2FeMoO6, for efficient low temperature operation and have a potential to improve the room temperature performance significantly in tunneling devices where decay in spin diffusion length of organic layer does not affect the transport.

引用

页数：6

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