Influence of VI:II ratio on the properties of MOCVD-grown ZnO thin films

被引：12
作者：
Pagni, O [1 ]
Leitch, AWR [1 ]
机构：
[1] Univ Port Elizabeth, Dept Phys, ZA-6000 Port Elizabeth, South Africa
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2004年 / 201卷 / 10期
关键词：
D O I：
10.1002/pssa.200404827
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report on the impact the MOCVD VI:II ratio during growth has on the properties of ZnO thin films grown on glass slides using diethyl zinc (DEZ) and tert-butanol (TBOH) as precursors. Our work displays the critical effect of this growth parameter on the defects located in the crystal lattice. Oxygen vacancies and other oxygen-induced defects are shown to affect the films' tensile strain, stress, grain size, bandgap structure, and dispersion properties.
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页码：2213 / 2218
页数：6
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