Influence of VI:II ratio on the properties of MOCVD-grown ZnO thin films

被引：12

作者：

Pagni, O ^{[1
]}

Leitch, AWR ^{[1
]}

机构：

[1] Univ Port Elizabeth, Dept Phys, ZA-6000 Port Elizabeth, South Africa

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2004年 / 201卷 / 10期

关键词：

D O I：

10.1002/pssa.200404827

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on the impact the MOCVD VI:II ratio during growth has on the properties of ZnO thin films grown on glass slides using diethyl zinc (DEZ) and tert-butanol (TBOH) as precursors. Our work displays the critical effect of this growth parameter on the defects located in the crystal lattice. Oxygen vacancies and other oxygen-induced defects are shown to affect the films' tensile strain, stress, grain size, bandgap structure, and dispersion properties.

引用

页码：2213 / 2218

页数：6

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