Defect passivation in poly-Si TFTs by ion implantation and pulsed laser annealing

被引：1

作者：

Good, Daniel ^{[1
]}

Wickboldt, Paul

Liu, Tsu-Jae King

机构：

[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

[2] JEM Enterprises, Walnut Creek, CA 94596 USA

[3] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

[4] Synopsys Inc, Mountain View, CA 94043 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2006年 / 27卷 / 10期

关键词：

excimer laser annealing (ELA); fluorine; ion implantation; nitrogen; oxygen; passivation; polycrystalline silicon (poly-Si); thin-film transistor (TFT);

D O I：

10.1109/LED.2006.883089

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Improvement in the performance of excimer laser annealed (ELA) poly-Si thin-film transistors was seen through ion implantation of N, O, or F prior to the ELA step. Devices passivated in this way show steeper subthreshold swings, higher carrier mobilities, and lower off current than unpassivated or hydrogen-passivated devices, even in a low thermal budget process. With the addition of a higher temperature anneal, the N passivated devices are superior both in terms of performance and reliability.

引用

页码：840 / 842

页数：3

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