Defect passivation in poly-Si TFTs by ion implantation and pulsed laser annealing

被引:1
|
作者
Good, Daniel [1 ]
Wickboldt, Paul
Liu, Tsu-Jae King
机构
[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA
[2] JEM Enterprises, Walnut Creek, CA 94596 USA
[3] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA
[4] Synopsys Inc, Mountain View, CA 94043 USA
关键词
excimer laser annealing (ELA); fluorine; ion implantation; nitrogen; oxygen; passivation; polycrystalline silicon (poly-Si); thin-film transistor (TFT);
D O I
10.1109/LED.2006.883089
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Improvement in the performance of excimer laser annealed (ELA) poly-Si thin-film transistors was seen through ion implantation of N, O, or F prior to the ELA step. Devices passivated in this way show steeper subthreshold swings, higher carrier mobilities, and lower off current than unpassivated or hydrogen-passivated devices, even in a low thermal budget process. With the addition of a higher temperature anneal, the N passivated devices are superior both in terms of performance and reliability.
引用
收藏
页码:840 / 842
页数:3
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