Effect of non-stoichiometric solution chemistry on improving the performance of wide-bandgap perovskite solar cells

被引：33

作者：

Yang, Mengjin ^{[1
]}

Kim, Dong Hoe ^{[1
]}

Yu, Yue ^{[2
]}

Li, Zhen ^{[1
]}

Reid, Obadiah G. ^{[1
]}

Song, Zhaoning ^{[2
]}

Zhao, Dewei ^{[2
]}

Wang, Changlei ^{[2
]}

Li, Liwei ^{[3
,4
]}

Meng, Yuan ^{[3
,4
]}

Guo, Ted ^{[3
,4
]}

Yan, Yanfa ^{[2
]}

Zhu, Kai ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Chem & Nanosci Ctr, Golden, CO 80401 USA

[2] Univ Toledo, Dept Phys & Astron, Toledo, OH 43606 USA

[3] ENN Energy Res Inst, Langfang 065001, Peoples R China

[4] ENN Solar Energy Co Ltd, Langfang 065001, Peoples R China

来源：

MATERIALS TODAY ENERGY | 2018年 / 7卷

关键词：

Wide bandgap perovskite; Tandem solar cell; Non-stoichiometric chemistry; FORMAMIDINIUM;

D O I：

10.1016/j.mtener.2017.10.001

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A high-efficiency wide-bandgap (WBG) perovskite solar cell is critical for developing perovskite-related (e.g., all-perovskite, perovskite/Si, or perovskite/Cu(In, Ga)Se-2) tandem devices. Here, we demonstrate the use of non-stoichiometric precursor chemistry with excess methylammonium halides (MAX; X = I, Br, or Cl) for preparing high-quality similar to 1.75-eV FA(0.83)Cs(0.17)Pb(I0.6Br0.4)(3) perovskite solar cells. Among various methylammonium halides, using excess MABr in the non-stoichiometric precursor exhibits the strongest effect on improving perovskite crystallographic properties and device characteristics without affecting the perovskite composition. In contrast, using excess MAI significantly reduces the bandgap of perovskite due to the replacement of Br with I. Using 40% excess MABr, we demonstrate a single-junction WBG perovskite solar cell with stabilized efficiency of 16.4%. We further demonstrate a 20.3%-efficient 4-terminal tandem device by using a 14.7%-efficient semi-transparent WBG perovskite top cell and an 18.6%-efficient unfiltered (5.6%-efficient filtered) Si bottom cell. (C) 2017 Elsevier Ltd. All rights reserved.

引用

页码：232 / 238

页数：7

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