DEVELOPMENT AND CHARACTERIZATION OF THE BONDING AND INTEGRATION TECHNOLOGIES NEEDED FOR FABRICATING SILICON CARBIDE BASED INJECTOR COMPONENTS

被引:3
作者
Halbig, Michael C. [1 ]
Singh, Mrityunjay [2 ]
机构
[1] NASA Glenn Res Ctr, Army Res Lab, Cleveland, OH USA
[2] NASA Glenn Res Ctr, Ohio Aerosp Inst, Cleveland, OH USA
来源
ADVANCED PROCESSING AND MANUFACTURING TECHNOLOGIES FOR STRUCTURAL AND MULTIFUNCTIONAL MATERIALS II | 2009年 / 29卷 / 09期
关键词
THERMAL-EXPANSION ANISOTROPY; SILICIDES; TI5SI3; PHASE;
D O I
10.1002/9780470456224.ch1
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Advanced ceramic bonding and integration technologies play a critical role in the fabrication and application of silicon carbide based components, for a number of aerospace and ground based applications. One such application is a lean direct injector for a turbine engine to achieve low NOx emissions. Ceramic to ceramic diffusion bonding and ceramic to metal brazing technologies are being developed for this injector application. For the diffusion bonding technology, titanium interlayers (coatings and foils) were used to aid in the joining of silicon carbide (SiC) substrates. The influence of such variables as surface finish, interlayer thickness, and processing time were investigated. Electron microprobe analysis was used to identify the reaction formed phases. In the diffusion bonds, an intermediate phase, Ti5Si3Cx, formed that is thermally incompatible in its thermal expansion and caused thermal stresses and cracking during the processing cool-down. Thinner interlayers of pure titanium and/or longer processing times resulted in an optimized microstructure. Tensile tests on the joined materials resulted in strengths of 13-28 MPa depending on the SiC substrate material. Non-destructive evaluation using ultrasonic immersion showed well formed bonds. For the joining technology of brazing Kovar fuel tubes to silicon carbide, preliminary development of the joining approach has begun. Various technical issues and requirements for the injector application are addressed.
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页码:1 / +
页数:2
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