Precise lattice location of substitutional and interstitial Mg in AlN

被引：10

作者：

Amorim, L. M. ^{[1
]}

Wahl, U. ^{[2
]}

Pereira, L. M. C. ^{[1
]}

Decoster, S. ^{[1
]}

Silva, D. J. ^{[2
,3
,4
]}

da Silva, M. R. ^{[5
]}

Gottberg, A. ^{[6
]}

Correia, J. G. ^{[2
]}

Temst, K. ^{[1
]}

Vantomme, A. ^{[1
]}

机构：

[1] Katholieke Univ Leuven, Inst Kern Stralingsfys, B-3001 Louvain, Belgium

[2] Univ Lisbon, Inst Super Tecn, Ctr Ciencias & Tecnol Nucl, P-2686953 Sacavem, Portugal

[3] Univ Porto, IFIMUP, P-4169007 Oporto, Portugal

[4] Univ Porto, IN Inst Nanosci & Nanotechnol, P-4169007 Oporto, Portugal

[5] Univ Lisbon, Ctr Fis Nucl, P-1649003 Libsoa, Portugal

[6] CERN, ISOLDE, CH-1211 Geneva 23, Switzerland

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 26期

关键词：

EMISSION; GAN;

D O I：

10.1063/1.4858389

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The lattice site location of radioactive Mg-27 implanted in AlN was determined by means of emission channeling. The majority of the Mg-27 was found to substitute for Al, yet significant fractions (up to 33%) were also identified close to the octahedral interstitial site. The activation energy for interstitial Mg diffusion is estimated to be between 1.1 eV and 1.7 eV. Substitutional Mg is shown to occupy ideal Al sites within a 0.1 angstrom experimental uncertainty. We discuss the absence of significant displacements from ideal Al sites, in the context of the current debate, on Mg doped nitride semiconductors. (C) 2013 AIP Publishing LLC.

引用

页数：5

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