Characterization of Standard CMOS Compatible Photodiodes and Pixels for Lab-on-Chip Devices

被引：0

作者：

Koeklue, Goezen ^{[1
,2
]}

Etienne-Cummings, Ralph ^{[3
]}

Leblebici, Yusuf ^{[2
]}

De Micheli, Giovanni ^{[1
]}

Carrara, Sandro ^{[1
]}

机构：

[1] Swiss Fed Inst Technol EPFL, LSI, Lausanne, Switzerland

[2] Swiss Fed Inst Technol EPFL, LSM, Lausanne, Switzerland

[3] Johns Hopkins Univ, Computat Sensory Motor Syst, Baltimore, MD USA

来源：

2013 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS) | 2013年

基金：

瑞士国家科学基金会;

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High quality CMOS image sensors are of great importance for LoC -Lab-on-Chip devices based on optical measurements. The main target in these devices is to minimize the cost and area while achieving a good resolution. The performance parameters of image sensor pixels and CMOS compatible photodiodes depend on the size, type and the geometry of the photodiode layout and varies for each technology. In this study, we present a comparative analysis of CMOS compatible photodiode types at different areas. The results have shown n -well/ p -sub type photodiode with 5 x 5 mu m(2) diffusion area achieves the highest sensitivity (6 9 : 8 1 x 1 0(1 2) V.s(-1).cm(-2)/ W.cm(2)) and with 4 0 x 4 0 mu m(2) diffusion area, highest SNR -Signal-to-Noise Ratio (7 2 : 2 6 d B) at 630 nm, while the p(+)/n -well/rho-sub type photodiode with 4 0 x 4 0 mu m(2) diffusion area results in highest responsivity (0 : 4 6 6 A.cm(2) = W.cm(2) ) at the same wavelength.

引用

页码：1075 / 1078

页数：4